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    华邦SPI FLASH                         华邦 SDRAM                 华邦 DDR/DDR2


     华邦SPI FLASH
    Part No.
    Density
    Organization
    VCC
    Temp.
    Max Freq.
    Comment
    Package(s)
    Status*
    RoHS
    W25X10BL 1M-bit 512 pages, 2.3V - 3.6V -40 to +85 50MHz Samples Available SOIC8 150mil, P Y
    (128KB) 4KB sectors, 32/64KB blocks, (100Mhz WSON 6X5mm
    Dual SPI Dual-SPI)
    W25X10BV 1M-bit 512 pages, 2.7V - 3.6V -40 to +85 104MHz Samples Available SOIC8 150mil, WSON 6X5mm P Y
    (128KB) 4KB sectors, (208MHz
    32/64KB blocks, Dual-SPI)
    Dual SPI
    W25X20BL 2M-bit 1024 pages, 2.3V - 3.6V -40 to +85 50MHz Samples Available SOIC8 150mil, P Y
    (256KB) 4KB sectors, (100Mhz WSON 6X5mm
    32/64KB blocks, Dual-SPI)
    Dual SPI
    W25X20BV 2M-bit 1024 pages, 2.7V - 3.6V -40 to +85 104MHz Samples Available SOIC8 150mil, WSON 6X5mm P Y
    (256KB) 4KB sectors, (208MHz
    32/64KB blocks, Dual-SPI)
    Dual SPI
    W25X40BL 4M-bit 2048 pages, 2.3V - 3.6V -40 to +85 50MHz Samples Available SOIC8 150mil, SOIC8 208mil, WSON 6X5mm,
    PDIP8 300mil
    P Y
    (512KB) 4KB sectors, (100MHz
    32/64KB blocks, Dual-SPI)
    Dual SPI
    W25X40BV 4M-bit 2048 pages, 2.7V - 3.6V -40 to +85 104MHz Samples Available SOIC8 150mil, SOIC8 208mil, WSON 6X5mm, PDIP8 300mil P Y
    (512KB) 4KB sectors, (208MHz
    32/64KB blocks, Dual-SPI)
    Dual SPI
    W25Q40BV 4M-bit(512KB) 2048 pages, 2.7V - 3.6V -40 to +85 104MHz Contact Winbond for availability SOIC8 150mil, SOIC8 208mil, WSON 6X5mm UD Y
    4KB sectors, (208/416MHz
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    W25Q40BW 4M-bit(512KB) 2048 pages, 1.65V - 1.95V -40 to +85 80MHz Contact Winbond for availability SOIC8 150mil, SOIC8 208mil, WSON 6X5mm UD Y
    4KB sectors, (160/320MHz
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    W25Q80BV 8M-bit
    (1MB)
    4096 pages, 2.7V - 3.6V -40 to +85 104MHz Samples Available SOIC8 150mil, SOIC8 208mil, WSON 6X5mm, PDIP8 300mil P Y
    4KB sectors, (208/416MHz
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    W25X16BV 16M-bit
    (2MB)
    8192 pages, 2.7V - 3.6V -40 to +85 80/104MHz Recommend SOIC8 150mil, SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, PDIP8 300mil P Y
    4KB sectors, (160/208MHz Dual-SPI) W25Q16BV
    32/64KB blocks,
    Dual output
    W25Q16BV 16M-bit
    (2MB)
     8192 pages, 2.7V - 3.6V   -40 to +85  80/104MHz Recommend SOIC8 150mil, P
    4KB sectors, (160/320MHz W25Q16CV SOIC8 208mil, SOIC16 300mil,
    32/64KB blocks, Dual/Quad-SPI) WSON 6X5mm, 
    Dual/Quad-SPI PDIP8 300mil
    W25Q16CV 16M-bit
    (2MB)
     8192 pages, 2.7V - 3.6V   -40 to +85  80/104MHz Samples Available  SOIC8 150mil, P
    4KB sectors, (160/320MHz SOIC8 208mil,
    32/64KB blocks, Dual/Quad-SPI) SOIC16 300mil,
    Dual/Quad-SPI WSON 6X5mm, 
    PDIP8 300mil
    W25X32BV 32M-bit
    (4MB)
    16384 pages, 2.7V - 3.6V -40 to +85  104MHz Recommend SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, WSON 8X6mm P Y
    4KB sectors, (208MHz W25Q32BV
    32/64KB blocks, Dual-SPI)
    Dual-SPI
    W25Q32BV 32M-bit (4MB) 16384 pages, 2.7V - 3.6V -40 to +85   104/80MHz Samples Available SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, WSON 8X6mm, PDIP8 300mil P Y
    4KB sectors, (208/320MHz
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    W25Q32BW 32M-bit (4MB) 16384 pages,  1.65V – 1.95V  -40 to +85  80MHz Contact Winbond for availability  SOIC8 150mil,
    SOIC8 208mil, SOIC16 300mil, WSON 6X5mm,
    WSON 8X6mm
    P
    4KB sectors, (160/320MHz
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    W25X64BV 64M-bit
    (8MB)
    32768 pages, 2.7V - 3.6V -40 to +85 80MHz Recommend SOIC8 208mil, SOIC16 300mil,
    WSON 8x6mm
    P Y
    4KB sectors, (160MHz W25Q64BV
    64KB blocks, Dual-SPI)
    Dual output
    W25Q64FV 64M-bit
    (8MB)
    32768 pages, 2.7V - 3.6V -40 to +85  104MHz Recommend SOIC8 208mil, SOIC16 300mil,
    WSON 6X5mm, WSON 8x6mm, PDIP8 300mil,
    TFBGFA24 8x6mm
    P Y
    4KB sectors, (208/416MHz W25Q64FV
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    W25Q64CV 64M-bit
    (8MB)
    32768 pages, 2.7V - 3.6V -40 to +85  80MHz Samples Available SOIC8 208mil, P Y
    4KB sectors, (160/320MHz SOIC16 300mil,
    32/64KB blocks, Dual/Quad-SPI) WSON 6X5mm, WSON 8x6mm,
    Dual/Quad-SPI PDIP8 300mil
    W25Q128BV 128M-bit
    (16MB)
    65536 pages, 2.7V - 3.6V -40 to +85 104/80MHz Samples Available SOIC16 300mil, P Y
    4KB sectors, (208/320MHz WSON 8X6mm
    32/64KB blocks, Dual/Quad-SPI)
    Dual/Quad-SPI
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time) = Under Development (Ready Time), NRFND=Not Recommended For New Design, EOL=End of life.
     华邦 SDRAM
    同步动态随机存取内存 SDRAM
    16Mb SDRAM
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9816G6IB 1Mx16 2 Banks -6 166 MHz CL3 3.3V±0.3V Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant P Y
    -7 143 MHz 2.7V~3.6V
    W9816G6IH 1Mx16 2 Banks -5 143 MHz CL2 3.3V±0.3V Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant P Y
    200 MHz CL3
    -6/-6I/-6A 166 MHz 3.3V±0.3V
    -7/-7I 143 MHz 2.7V~3.6V
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. 
    64Mb SDRAM
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9864G2GH 2Mx32 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 86-pin (400 mil) using Pb free with RoHS compliant N Y
    -6/-6I 166 MHz
    -7  143 MHz 2.7V~3.6V
    W9864G2IB 2Mx32 4 Banks -6 166 MHz CL3 3.3V±0.3V Packaged in TFBGA 90 ball(8x13mm2  ), using Lead free materials with RoHS compliant P Y
    -7 143 MHz 2.7V~3.6V
    W9864G2IH 2Mx32 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant P Y
    -6/-6I/-6A 166 MHz
    -7  143 MHz 2.7V~3.6V
    W9864G6IH 4Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y
    -6/-6I/-6A 166 MHz
    -7/-7S 143 MHz 2.7V~3.6V
    W9864G6JH 4Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y
    -6/-6I 166 MHz
    -7/-7S 143 MHz 2.7V~3.6V
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.
    128Mb SDRAM
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9812G2IH 4Mx32 4 Banks -6C 166 MHz CL3 3.3V±0.3V Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant P Y
    -6/-6I/-6A 2.7V~3.6V
    -75 133 MHz
    W9812G2IB 4Mx32 4 Banks -6/-6I/-6A 166 MHz CL3 2.7V~3.6V Packaged in TFBGA 90 Ball(8x13mm2 ), using Lead free materials with RoHS compliant P Y
    -75 133 MHz
    W9812G6IH 8Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y
    -6/-6C/-6I/-6A 166 MHz
    -75 133 MHz
    W9812G6JH 8Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V TSOP II 54-pin, 400 mil using Lead free with RoHS compliant P Y
    -6/-6I 166 MHz
    -75 133 MHz
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
    256Mb SDRAM
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9825G2DB 8Mx32 4 Banks -6 166 MHz CL3 3.3V±0.3V TFBGA 90 ball using Pb free with RoHS compliant P Y
    -6I 2.7V~3.6V  
    -75/75I 133 MHz
    W9825G6EH 16Mx16 4 Banks -5 200MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant P Y
    -6/-6I/-6A 166 MHz
    -6 133 MHz CL2
    -75/75I/75A CL3
    W9825G6JH 16Mx16 4 Banks -5 200MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant P Y
    -6/-6I 166 MHz
    -6 133 MHz CL2
    -75 CL3
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
     华邦 DDR/DDR2
    同步动态随机存取内存DDR
    64Mb DDR
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9464G6IH 4Mx16 4 Banks -4 250 MHz CL3/CL4 2.6V±0.1V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant N Y
    -5/-5I 200 MHz CL3 2.5V±0.2V
    -6/-6I 166 MHz CL2.5
    W9464G6JH 4Mx16 4 Banks -4 250 MHz CL3/CL4 2.4V~2.7V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant P Y
    -5 200 MHz CL3 2.5V±0.2V
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.
    128Mb DDR
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9412G6IH 8Mx16 4 Banks -4 250 MHz CL3/CL4 2.5V ±0.1V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant N Y
    -5/-5I 200 MHz CL3 2.5V±0.2V
    -6/-6I 166 MHz CL2.5
    W9412G6JH 8Mx16 4 Banks -4 250 MHz CL3/CL4 2.4V~2.7V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant P Y
    -5 200 MHz CL3 2.5V±0.2V
     W9412G2IB 4Mx32 4 Banks -4 250 MHz CL3/CL4 2.5V ±0.1V Packaged in 144L LFBGA, using Lead free materials with RoHS compliant P Y
    -5/-5I 200 MHz CL3 2.5V±0.2V
    -6/-6I 166 MHz CL2.5
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.
    256Mb DDR
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9425G6EH 16Mx16 4 Banks -4 250 MHz CL3 2.6V ±0.1V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant N Y
    -5/-5I 200 MHz 2.5V ±0.2V?
    -6/-6I 166 MHz CL2.5
    W9425G6JH 16Mx16 4 Banks -4 250 MHz CL3/CL4 2.4V~2.7V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant P Y
    -5/-5I 200 MHz CL3 2.5V ±0.2V?
    W9425G6JB 16Mx16 4 Banks -5 200MHz CL3 2.5V ±0.2V Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant P Y
    W9425G8EH 32Mx8 4 Banks -5 200 MHz CL3 2.5V±0.2V Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant EOL Y
    128Mb DDR2
    Part No. Organization Speed Grade Voltage Package Status* RoHS
    W9712G6JB 8Mx16 4 Banks -18 DDR2-1066 2007/7/7 1.8V±0.1V WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant P Y
    -25/ 25I/25A DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    W9712G8JB 16Mx8 4 Banks -18 DDR2-1066 2007/7/7 1.8V±0.1V WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant P Y
    -25 DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
    256Mb DDR2
    Part No. Organization Speed Grade CL-tRCD-tRP? Voltage Package Status* RoHS
    W9725G6JB 16Mx16 4 Banks -18 DDR2-1066 2007/7/7 1.8V±0.1V WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant P Y
    -25/ 25I/25A DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    W9725G8JB 32Mx8 4 Banks -18 DDR2-1066 2007/7/7 1.8V±0.1V WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant P Y
    -25/ 25I DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
     512Mb DDR2
    Part No. Organization Speed Grade CL-tRCD-tRP? Voltage Package Status* RoHS
    W9751G6JB 32Mx16 4 Banks -18   DDR2-1066 2007/7/7 1.8V±0.1V WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant P Y
    -25/25I DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    W9751G8JB 64Mx8 4 Banks -18   DDR2-1066 2007/7/7 1.8V±0.1V WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant P Y
    -25/25I DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
     1G DDR2
    Part No. Organization Speed Grade CL-tRCD-tRP? Voltage Package Status* RoHS
    W971GG6JB 64Mx16 8 Banks -18   DDR2-1066 2006/6/6 1.8V±0.1V WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant P Y
    -25/25I  DDR2-800 2005/5/5
    -3 DDR2-667 2005/5/5
    W971GG8JB 128Mx8 8 Banks -18   DDR2-1066 2006/6/6 1.8V±0.1V WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant P Y
    -25/25I  DDR2-800 2005/5/5
    -3 DDR2-667 2005/5/5
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
    2G DDR2
    Part No. Organization Speed Grade CL-tRCD-tRP? Voltage Package Status* RoHS
    W972GG6JB 128Mx16 8 Banks -18   DDR2-1066 2007/7/7 1.8V±0.1V WBGA 84 Ball (11x13mm2), using Lead free materials with RoHS compliant P Y
    -25/25I  DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    W972GG8JB 256Mx8 8 Banks -18   DDR2-1066 2007/7/7 1.8V±0.1V WBGA 60 Ball (11x11.5mm2), using Lead free materials with RoHS compliant P Y
    -25/25I DDR2-800 5-5-5/6-6-6
    -3 DDR2-667 2005/5/5
    * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
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