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华邦SPI FLASH 华邦 SDRAM 华邦 DDR/DDR2

华邦SPI FLASH

Part No.

Density

Organization

VCC

Temp.

Max Freq.

Comment

Package(s)

Status*

RoHS

W25X10BL	1M-bit	512 pages,	2.3V - 3.6V	-40 to +85	50MHz	Samples Available	SOIC8 150mil,	P	Y
	(128KB)	4KB sectors, 32/64KB blocks,			(100Mhz		WSON 6X5mm
		Dual SPI			Dual-SPI)
W25X10BV	1M-bit	512 pages,	2.7V - 3.6V	-40 to +85	104MHz	Samples Available	SOIC8 150mil, WSON 6X5mm	P	Y
	(128KB)	4KB sectors,			(208MHz
		32/64KB blocks,			Dual-SPI)
		Dual SPI
W25X20BL	2M-bit	1024 pages,	2.3V - 3.6V	-40 to +85	50MHz	Samples Available	SOIC8 150mil,	P	Y
	(256KB)	4KB sectors,			(100Mhz		WSON 6X5mm
		32/64KB blocks,			Dual-SPI)
		Dual SPI
W25X20BV	2M-bit	1024 pages,	2.7V - 3.6V	-40 to +85	104MHz	Samples Available	SOIC8 150mil, WSON 6X5mm	P	Y
	(256KB)	4KB sectors,			(208MHz
		32/64KB blocks,			Dual-SPI)
		Dual SPI
W25X40BL	4M-bit	2048 pages,	2.3V - 3.6V	-40 to +85	50MHz	Samples Available	SOIC8 150mil, SOIC8 208mil, WSON 6X5mm, PDIP8 300mil	P	Y
	(512KB)	4KB sectors,			(100MHz
		32/64KB blocks,			Dual-SPI)
		Dual SPI
W25X40BV	4M-bit	2048 pages,	2.7V - 3.6V	-40 to +85	104MHz	Samples Available	SOIC8 150mil, SOIC8 208mil, WSON 6X5mm, PDIP8 300mil	P	Y
	(512KB)	4KB sectors,			(208MHz
		32/64KB blocks,			Dual-SPI)
		Dual SPI
W25Q40BV	4M-bit(512KB)	2048 pages,	2.7V - 3.6V	-40 to +85	104MHz	Contact Winbond for availability	SOIC8 150mil, SOIC8 208mil, WSON 6X5mm	UD	Y
		4KB sectors,			(208/416MHz
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
W25Q40BW	4M-bit(512KB)	2048 pages,	1.65V - 1.95V	-40 to +85	80MHz	Contact Winbond for availability	SOIC8 150mil, SOIC8 208mil, WSON 6X5mm	UD	Y
		4KB sectors,			(160/320MHz
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
W25Q80BV	8M-bit (1MB)	4096 pages,	2.7V - 3.6V	-40 to +85	104MHz	Samples Available	SOIC8 150mil, SOIC8 208mil, WSON 6X5mm, PDIP8 300mil	P	Y
		4KB sectors,			(208/416MHz
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
W25X16BV	16M-bit (2MB)	8192 pages,	2.7V - 3.6V	-40 to +85	80/104MHz	Recommend	SOIC8 150mil, SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, PDIP8 300mil	P	Y
		4KB sectors,			(160/208MHz Dual-SPI)	W25Q16BV
		32/64KB blocks,
		Dual output
W25Q16BV	16M-bit (2MB)	8192 pages,	2.7V - 3.6V	-40 to +85	80/104MHz	Recommend	SOIC8 150mil,	P	Y
		4KB sectors,			(160/320MHz	W25Q16CV	SOIC8 208mil, SOIC16 300mil,
		32/64KB blocks,			Dual/Quad-SPI)		WSON 6X5mm,
		Dual/Quad-SPI					PDIP8 300mil
W25Q16CV	16M-bit (2MB)	8192 pages,	2.7V - 3.6V	-40 to +85	80/104MHz	Samples Available	SOIC8 150mil,	P	Y
		4KB sectors,			(160/320MHz		SOIC8 208mil,
		32/64KB blocks,			Dual/Quad-SPI)		SOIC16 300mil,
		Dual/Quad-SPI					WSON 6X5mm,
							PDIP8 300mil
W25X32BV	32M-bit (4MB)	16384 pages,	2.7V - 3.6V	-40 to +85	104MHz	Recommend	SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, WSON 8X6mm	P	Y
		4KB sectors,			(208MHz	W25Q32BV
		32/64KB blocks,			Dual-SPI)
		Dual-SPI
W25Q32BV	32M-bit (4MB)	16384 pages,	2.7V - 3.6V	-40 to +85	104/80MHz	Samples Available	SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, WSON 8X6mm, PDIP8 300mil	P	Y
		4KB sectors,			(208/320MHz
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
W25Q32BW	32M-bit (4MB)	16384 pages,	1.65V – 1.95V	-40 to +85	80MHz	Contact Winbond for availability	SOIC8 150mil, SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, WSON 8X6mm	P	Y
		4KB sectors,			(160/320MHz
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
W25X64BV	64M-bit (8MB)	32768 pages,	2.7V - 3.6V	-40 to +85	80MHz	Recommend	SOIC8 208mil, SOIC16 300mil, WSON 8x6mm	P	Y
		4KB sectors,			(160MHz	W25Q64BV
		64KB blocks,			Dual-SPI)
		Dual output
W25Q64FV	64M-bit (8MB)	32768 pages,	2.7V - 3.6V	-40 to +85	104MHz	Recommend	SOIC8 208mil, SOIC16 300mil, WSON 6X5mm, WSON 8x6mm, PDIP8 300mil, TFBGFA24 8x6mm	P	Y
		4KB sectors,			(208/416MHz	W25Q64FV
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
W25Q64CV	64M-bit (8MB)	32768 pages,	2.7V - 3.6V	-40 to +85	80MHz	Samples Available	SOIC8 208mil,	P	Y
		4KB sectors,			(160/320MHz		SOIC16 300mil,
		32/64KB blocks,			Dual/Quad-SPI)		WSON 6X5mm, WSON 8x6mm,
		Dual/Quad-SPI					PDIP8 300mil
W25Q128BV	128M-bit (16MB)	65536 pages,	2.7V - 3.6V	-40 to +85	104/80MHz	Samples Available	SOIC16 300mil,	P	Y
		4KB sectors,			(208/320MHz		WSON 8X6mm
		32/64KB blocks,			Dual/Quad-SPI)
		Dual/Quad-SPI
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time) = Under Development (Ready Time), NRFND=Not Recommended For New Design, EOL=End of life.

华邦 SDRAM

同步动态随机存取内存 SDRAM

16Mb SDRAM
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9816G6IB	1Mx16	2 Banks	-6	166 MHz	CL3	3.3V±0.3V	Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant	P	Y
			-7	143 MHz		2.7V~3.6V
W9816G6IH	1Mx16	2 Banks	-5	143 MHz	CL2	3.3V±0.3V	Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant	P	Y
				200 MHz	CL3
			-6/-6I/-6A	166 MHz		3.3V±0.3V
			-7/-7I	143 MHz		2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
64Mb SDRAM
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9864G2GH	2Mx32	4 Banks	-5	200 MHz	CL3	3.3V±0.3V	Packaged in TSOP II 86-pin (400 mil) using Pb free with RoHS compliant	N	Y
			-6/-6I	166 MHz
			-7	143 MHz		2.7V~3.6V
W9864G2IB	2Mx32	4 Banks	-6	166 MHz	CL3	3.3V±0.3V	Packaged in TFBGA 90 ball(8x13mm2 ), using Lead free materials with RoHS compliant	P	Y
			-7	143 MHz		2.7V~3.6V
W9864G2IH	2Mx32	4 Banks	-5	200 MHz	CL3	3.3V±0.3V	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant	P	Y
			-6/-6I/-6A	166 MHz
			-7	143 MHz		2.7V~3.6V
W9864G6IH	4Mx16	4 Banks	-5	200 MHz	CL3	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant	P	Y
			-6/-6I/-6A	166 MHz
			-7/-7S	143 MHz		2.7V~3.6V
W9864G6JH	4Mx16	4 Banks	-5	200 MHz	CL3	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant	P	Y
			-6/-6I	166 MHz
			-7/-7S	143 MHz		2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.
128Mb SDRAM
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9812G2IH	4Mx32	4 Banks	-6C	166 MHz	CL3	3.3V±0.3V	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant	P	Y
			-6/-6I/-6A			2.7V~3.6V
			-75	133 MHz
W9812G2IB	4Mx32	4 Banks	-6/-6I/-6A	166 MHz	CL3	2.7V~3.6V	Packaged in TFBGA 90 Ball(8x13mm2 ), using Lead free materials with RoHS compliant	P	Y
			-75	133 MHz
W9812G6IH	8Mx16	4 Banks	-5	200 MHz	CL3	3.3V±0.3V	TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant	P	Y
			-6/-6C/-6I/-6A	166 MHz
			-75	133 MHz
W9812G6JH	8Mx16	4 Banks	-5	200 MHz	CL3	3.3V±0.3V	TSOP II 54-pin, 400 mil using Lead free with RoHS compliant	P	Y
			-6/-6I	166 MHz
			-75	133 MHz
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
256Mb SDRAM
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9825G2DB	8Mx32	4 Banks	-6	166 MHz	CL3	3.3V±0.3V	TFBGA 90 ball using Pb free with RoHS compliant	P	Y
			-6I			2.7V~3.6V
			-75/75I	133 MHz
W9825G6EH	16Mx16	4 Banks	-5	200MHz	CL3	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant	P	Y
			-6/-6I/-6A	166 MHz
			-6	133 MHz	CL2
			-75/75I/75A		CL3
W9825G6JH	16Mx16	4 Banks	-5	200MHz	CL3	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant	P	Y
			-6/-6I	166 MHz
			-6	133 MHz	CL2
			-75		CL3
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

华邦 DDR/DDR2

同步动态随机存取内存DDR

64Mb DDR
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9464G6IH	4Mx16	4 Banks	-4	250 MHz	CL3/CL4	2.6V±0.1V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	N	Y
			-5/-5I	200 MHz	CL3	2.5V±0.2V
			-6/-6I	166 MHz	CL2.5
W9464G6JH	4Mx16	4 Banks	-4	250 MHz	CL3/CL4	2.4V~2.7V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	P	Y
			-5	200 MHz	CL3	2.5V±0.2V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.

128Mb DDR
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9412G6IH	8Mx16	4 Banks	-4	250 MHz	CL3/CL4	2.5V ±0.1V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	N	Y
			-5/-5I	200 MHz	CL3	2.5V±0.2V
			-6/-6I	166 MHz	CL2.5
W9412G6JH	8Mx16	4 Banks	-4	250 MHz	CL3/CL4	2.4V~2.7V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	P	Y
			-5	200 MHz	CL3	2.5V±0.2V
W9412G2IB	4Mx32	4 Banks	-4	250 MHz	CL3/CL4	2.5V ±0.1V	Packaged in 144L LFBGA, using Lead free materials with RoHS compliant	P	Y
			-5/-5I	200 MHz	CL3	2.5V±0.2V
			-6/-6I	166 MHz	CL2.5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.

256Mb DDR
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9425G6EH	16Mx16	4 Banks	-4	250 MHz	CL3	2.6V ±0.1V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	N	Y
			-5/-5I	200 MHz		2.5V ±0.2V?
			-6/-6I	166 MHz	CL2.5
W9425G6JH	16Mx16	4 Banks	-4	250 MHz	CL3/CL4	2.4V~2.7V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	P	Y
			-5/-5I	200 MHz	CL3	2.5V ±0.2V?
W9425G6JB	16Mx16	4 Banks	-5	200MHz	CL3	2.5V ±0.2V	Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant	P	Y
W9425G8EH	32Mx8	4 Banks	-5	200 MHz	CL3	2.5V±0.2V	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant	EOL	Y



128Mb DDR2
Part No.	Organization		Speed Grade			Voltage	Package	Status*	RoHS
W9712G6JB	8Mx16	4 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant	P	Y
			-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
W9712G8JB	16Mx8	4 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant	P	Y
			-25	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

256Mb DDR2
Part No.	Organization		Speed Grade		CL-tRCD-tRP?	Voltage	Package	Status*	RoHS
W9725G6JB	16Mx16	4 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant	P	Y
			-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
W9725G8JB	32Mx8	4 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant	P	Y
			-25/ 25I	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

512Mb DDR2
Part No.	Organization		Speed Grade		CL-tRCD-tRP?	Voltage	Package	Status*	RoHS
W9751G6JB	32Mx16	4 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant	P	Y
			-25/25I	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
W9751G8JB	64Mx8	4 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant	P	Y
			-25/25I	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

1G DDR2
Part No.	Organization		Speed Grade		CL-tRCD-tRP?	Voltage	Package	Status*	RoHS
W971GG6JB	64Mx16	8 Banks	-18	DDR2-1066	2006/6/6	1.8V±0.1V	WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant	P	Y
			-25/25I	DDR2-800	2005/5/5
			-3	DDR2-667	2005/5/5
W971GG8JB	128Mx8	8 Banks	-18	DDR2-1066	2006/6/6	1.8V±0.1V	WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant	P	Y
			-25/25I	DDR2-800	2005/5/5
			-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
2G DDR2
Part No.	Organization		Speed Grade		CL-tRCD-tRP?	Voltage	Package	Status*	RoHS
W972GG6JB	128Mx16	8 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 84 Ball (11x13mm2), using Lead free materials with RoHS compliant	P	Y
			-25/25I	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
W972GG8JB	256Mx8	8 Banks	-18	DDR2-1066	2007/7/7	1.8V±0.1V	WBGA 60 Ball (11x11.5mm2), using Lead free materials with RoHS compliant	P	Y
			-25/25I	DDR2-800	5-5-5/6-6-6
			-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.